CPC H01L 29/0607 (2013.01) [H01L 29/41775 (2013.01); H01L 29/42356 (2013.01); H01L 29/7816 (2013.01)] | 11 Claims |
1. A semiconductor device comprising:
a semiconductor substrate;
a first well of a first conductivity type in a surface region that comprises a surface of the semiconductor substrate;
a first impurity region of a second conductivity type in a region of a surface of the first well;
a second impurity region of the first conductivity type, a portion of the first well being located between the second impurity region and the first impurity region in the surface region of the semiconductor substrate;
a first insulating body on the surface of the semiconductor substrate;
a gate electrode extending over part of the first well and part of the second impurity region on the first insulating body;
an interconnection extending in a region above the gate electrode and the first insulating body;
a second insulating body extending on an upper surface of the gate electrode and over a region above the second impurity region; and
a first conductive body on the second insulating body and below the interconnection.
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