US 12,074,193 B2
Semiconductor device structure with magnetic element
Chi-Cheng Chen, Tainan (TW); Wei-Li Huang, Pingtung (TW); Chun-Yi Wu, Tainan (TW); Kuang-Yi Wu, Changhua County (TW); Hon-Lin Huang, Hsinchu (TW); Chih-Hung Su, Tainan (TW); Chin-Yu Ku, Hsinchu (TW); and Chen-Shien Chen, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 30, 2023, as Appl. No. 18/193,544.
Application 17/402,889 is a division of application No. 16/432,625, filed on Jun. 5, 2019, granted, now 11,094,776, issued on Aug. 17, 2021.
Application 18/193,544 is a continuation of application No. 17/402,889, filed on Aug. 16, 2021, granted, now 11,621,317.
Claims priority of provisional application 62/725,695, filed on Aug. 31, 2018.
Prior Publication US 2023/0238422 A1, Jul. 27, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/31 (2006.01); H01F 41/04 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/10 (2013.01) [H01F 41/046 (2013.01); H01L 21/76823 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/53204 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04073 (2013.01); H01L 2224/05 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a magnetic element over the substrate;
an etch stop layer between the magnetic element and the substrate;
an isolation layer extending exceeding edges the magnetic element, wherein the isolation layer contains a polymer material; and
a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.