CPC H01L 27/156 (2013.01) | 15 Claims |
1. An optoelectronic device including a substrate having a support face and a plurality of light-emitting diodes, each being wire-shaped and formed on the support face so as to be elongate along a longitudinal axis substantially transverse to the support face of the substrate, each light-emitting diode comprising a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the first doped area being constituted, over all or part of its height counted along the longitudinal axis, of a first central portion substantially elongate along the longitudinal axis formed in a first material based on gallium nitride and a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion being constituted of a first outer part laterally arranged around the first portion, all or part of the first part having a first average atomic concentration of aluminum and of a second lower part arranged, along the longitudinal axis, at least between the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating.
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