US 12,074,191 B2
Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride
Pierre Tchoulfian, Grenoble (FR); and Benoît Amstatt, Grenoble (FR)
Assigned to ALEDIA, Échirolles (FR)
Appl. No. 17/613,252
Filed by ALEDIA, Échirolles (FR)
PCT Filed Apr. 29, 2020, PCT No. PCT/FR2020/050725
§ 371(c)(1), (2) Date Nov. 22, 2021,
PCT Pub. No. WO2020/234521, PCT Pub. Date Nov. 26, 2020.
Claims priority of application No. 1905257 (FR), filed on May 20, 2019.
Prior Publication US 2022/0223646 A1, Jul. 14, 2022
Int. Cl. H01L 27/15 (2006.01)
CPC H01L 27/156 (2013.01) 15 Claims
OG exemplary drawing
 
1. An optoelectronic device including a substrate having a support face and a plurality of light-emitting diodes, each being wire-shaped and formed on the support face so as to be elongate along a longitudinal axis substantially transverse to the support face of the substrate, each light-emitting diode comprising a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the first doped area being constituted, over all or part of its height counted along the longitudinal axis, of a first central portion substantially elongate along the longitudinal axis formed in a first material based on gallium nitride and a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion being constituted of a first outer part laterally arranged around the first portion, all or part of the first part having a first average atomic concentration of aluminum and of a second lower part arranged, along the longitudinal axis, at least between the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating.