	US 12,074,190 B2
	Image sensor device
Bo-Tsung Tsai, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Nov. 22, 2021, as Appl. No. 17/532,943.
Application 17/532,943 is a division of application No. 16/694,920, filed on Nov. 25, 2019, granted, now 11,183,532.
Application 16/694,920 is a continuation of application No. 15/489,831, filed on Apr. 18, 2017, granted, now 10,490,596, issued on Nov. 26, 2019.
Claims priority of provisional application 62/427,933, filed on Nov. 30, 2016.
Prior Publication US 2022/0085083 A1, Mar. 17, 2022
Int. Cl. H01L 27/146 (2006.01)

CPC H01L 27/1469 (2013.01) [H01L 27/14614 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01)]

20 Claims

1. A device comprising:

a substrate;

a light sensitive element in the substrate;

a first pinning region in the substrate and over the light sensitive element;

a lightly-doped region in the substrate and over the light sensitive element, wherein the lightly-doped region is laterally adjacent the first pinning region;

a floating node in the first pinning region, the floating node being spaced from and surrounded by the lightly-doped region, wherein a first portion of the first pinning region is between the floating node and the lightly-doped region; and

a gate stack over the first portion of the first pinning region and the lightly-doped region, wherein the gate stack extends across a boundary between the first pinning region and the lightly-doped region.