US 12,074,189 B2
Image sensor and method of manufacturing same
Sangsu Park, Seoul (KR); Kwansik Kim, Seoul (KR); Sangchun Park, Seoul (KR); Beomsuk Lee, Seoul (KR); and Taeyon Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 19, 2022, as Appl. No. 17/947,702.
Application 17/947,702 is a division of application No. 16/878,303, filed on May 19, 2020, granted, now 11,450,704.
Claims priority of application No. 10-2019-0138988 (KR), filed on Nov. 1, 2019.
Prior Publication US 2023/0017757 A1, Jan. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 31/032 (2006.01); H04N 25/13 (2023.01); H04N 25/616 (2023.01); H04N 25/617 (2023.01); H10K 30/65 (2023.01)
CPC H01L 27/14643 (2013.01) [H01L 27/14609 (2013.01); H01L 27/14625 (2013.01); H01L 27/1463 (2013.01); H01L 27/14638 (2013.01); H01L 27/14665 (2013.01); H04N 25/13 (2023.01); H04N 25/617 (2023.01); H10K 30/65 (2023.02); H01L 27/14621 (2013.01); H01L 27/1464 (2013.01); H01L 31/0323 (2013.01); H04N 25/616 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate including a plurality of pixel regions;
a wiring structure disposed on the semiconductor substrate and having a wiring circuit;
a plurality of first transparent electrodes respectively disposed on the wiring structure to correspond to the plurality of pixel regions;
an isolation pattern disposed on the wiring structure between the plurality of first transparent electrodes on the wiring structure and having a trench spaced apart from the plurality of first transparent electrodes;
a drain electrode disposed in the trench of the isolation pattern; and
an organic photoelectric layer and a second transparent electrode sequentially disposed on the plurality of first transparent electrodes and the isolation pattern.