US 12,074,185 B2
Semiconductor device
Naoki Kakoiyama, Kanagawa (JP); and Shuichi Oka, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/434,937
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jan. 9, 2020, PCT No. PCT/JP2020/000408
§ 371(c)(1), (2) Date Aug. 30, 2021,
PCT Pub. No. WO2020/183881, PCT Pub. Date Sep. 17, 2020.
Claims priority of application No. 2019-045052 (JP), filed on Mar. 12, 2019.
Prior Publication US 2022/0149099 A1, May 12, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 23/13 (2006.01); H01L 23/15 (2006.01); H01L 23/367 (2006.01)
CPC H01L 27/14627 (2013.01) [H01L 23/13 (2013.01); H01L 23/15 (2013.01); H01L 23/367 (2013.01); H01L 27/14623 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a glass substrate, wherein the glass substrate includes:
a through hole penetrating a front surface of the glass substrate and a back surface of the glass substrate,
a stepped portion on an outer periphery of the through hole, and
a wiring layer on each of the front surface and the back surface of the glass substrate; and
a semiconductor element joined to the stepped portion, wherein the semiconductor element is at a position where a surface of the semiconductor element is substantially on a same plane as the wiring layer.