US 12,074,180 B2
Imaging element and method of manufacturing imaging element
Toshikazu Shibayama, Nagasaki (JP); Yusuke Moriya, Nagasaki (JP); and Nobuyuki Mitsunaga, Nagasaki (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 16/976,749
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jan. 21, 2019, PCT No. PCT/JP2019/001598
§ 371(c)(1), (2) Date Aug. 29, 2020,
PCT Pub. No. WO2019/171787, PCT Pub. Date Sep. 12, 2019.
Claims priority of application No. 2018-040618 (JP), filed on Mar. 7, 2018.
Prior Publication US 2021/0005656 A1, Jan. 7, 2021
Int. Cl. H01L 27/146 (2006.01); G02B 1/04 (2006.01); G02B 1/11 (2015.01)
CPC H01L 27/14618 (2013.01) [G02B 1/041 (2013.01); G02B 1/11 (2013.01); H01L 27/1462 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01)] 8 Claims
OG exemplary drawing
 
1. An imaging element, comprising:
a pixel on a semiconductor substrate;
a microlens adjacent to the pixel, wherein
the microlens is configured to:
collect incident light,
radiate the incident light on the pixel, and
flatten a surface of the pixel, and
the pixel is configured to generate an image signal based on the incident light radiated on the pixel;
a first transparent resin layer adjacent to the microlens,
wherein the first transparent resin layer has a refractive index different from a refractive index of the microlens by a difference of 0.4 to 0.6;
a first antireflection film;
a second antireflection film on a surface of the microlens,
wherein the first transparent resin layer is between the first antireflection film and the second antireflection film; and
a sealing glass adjacent to the first transparent resin layer,
wherein the sealing glass seals the semiconductor substrate.