US 12,074,178 B2
Imaging device and electronic apparatus
Chigusa Yamane, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/309,790
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Nov. 22, 2019, PCT No. PCT/JP2019/045725
§ 371(c)(1), (2) Date Jun. 18, 2021,
PCT Pub. No. WO2020/137282, PCT Pub. Date Jul. 2, 2020.
Claims priority of application No. 2018-247892 (JP), filed on Dec. 28, 2018.
Prior Publication US 2022/0109017 A1, Apr. 7, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14605 (2013.01) [H01L 27/14607 (2013.01); H01L 27/14621 (2013.01)] 11 Claims
OG exemplary drawing
 
1. An imaging device, comprising:
a first electrode that includes an oxide semiconductor material having an amorphous state;
a second electrode that is opposed to the first electrode;
two or more pixels, wherein the first electrode is a common layer for the two or more pixels; and
a photoelectric converter between the first electrode and the second electrode, wherein the photoelectric converter includes:
a photoelectric conversion layer;
a first contact layer; and
a second contact layer, wherein
the first contact layer is between the photoelectric conversion layer and the first electrode,
the second contact layer is on an opposite side of the photoelectric conversion layer from the first contact layer,
the first contact layer and the photoelectric conversion layer include a compound semiconductor material,
the second contact layer includes a first conductivity type region and a second conductivity type region,
the first conductivity type region is in a region that is opposed to each pixel of the two or more pixels, and
the second conductivity type region is around the first conductivity type region.