US 12,074,169 B2
Structures and methods for trench isolation
Kuan-Jung Chen, Hsin-Chu (TW); Tsung-Lin Lee, New Taipei (TW); Chung-Ming Lin, Taichung (TW); Wen-Chih Chiang, Hsin-Chu (TW); and Cheng-Hung Wang, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 28, 2022, as Appl. No. 17/876,409.
Application 17/876,409 is a division of application No. 16/665,791, filed on Oct. 28, 2019, granted, now 11,894,381.
Claims priority of provisional application 62/752,569, filed on Oct. 30, 2018.
Prior Publication US 2022/0367523 A1, Nov. 17, 2022
Int. Cl. H01L 21/74 (2006.01); H01L 23/535 (2006.01); H01L 27/12 (2006.01)
CPC H01L 27/1203 (2013.01) [H01L 21/743 (2013.01); H01L 23/535 (2013.01)] 20 Claims
OG exemplary drawing
 
4. A method of forming a silicon-on-insulator (SOI) structure, comprising:
providing a SOI substrate that includes:
a handle layer,
an insulation layer comprising silicon dioxide and arranged over the handle layer, and
a buried layer arranged over the insulation layer;
forming a shallow trench isolation (STI) layer on the buried layer;
forming a Silicon Nitride (SiN) layer on the STI layer;
forming a trench extending downward from an upper surface of the SiN layer through the STI layer and the buried layer and terminating in the handle layer;
forming a dielectric layer comprising a bottom portion that extends along and is located on a bottom surface of the trench and contacting the handle layer, wherein
the dielectric layer comprises: a first sub-layer of lining oxide, and a second sub-layer of pad oxide that is formed on the first sub-layer and is thicker than the first sub-layer,
the bottom portion of the dielectric layer comprises a first bottom portion of the first sub-layer and a second bottom portion of the second sub-layer; and
a polysilicon region filling the trench and contacting the second bottom portion of the second sub-layer in the dielectric layer.