US 12,074,166 B2
Epitaxy regions extending below STI regions and profiles thereof
Shahaji B. More, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/818,738.
Application 17/818,738 is a division of application No. 17/167,336, filed on Feb. 4, 2021, granted, now 11,610,890.
Claims priority of provisional application 63/078,960, filed on Sep. 16, 2020.
Claims priority of provisional application 63/065,192, filed on Aug. 13, 2020.
Prior Publication US 2022/0384569 A1, Dec. 1, 2022
Int. Cl. H01L 29/76 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a semiconductor substrate;
isolation regions extending into the semiconductor substrate;
a semiconductor fin between the isolation regions, wherein the semiconductor fin protrudes higher than top surfaces of the isolation regions;
a gate stack on a top surface and sidewalls of the semiconductor fin; and
an epitaxy source/drain region on a side of the semiconductor fin, wherein the epitaxy source/drain region extends to a level lower than top surfaces of the isolation regions, and wherein the epitaxy source/drain region comprises:
a first semiconductor layer having a first dopant concentration; and
an embedded stressor over and contacting the first semiconductor layer, wherein the embedded stressor has a second dopant concentration higher than the first dopant concentration, and wherein the embedded stressor has an upper portion higher than the top surface of the semiconductor fin, and a lower portion lower than the top surface of the semiconductor fin.