US 12,074,165 B2
Gate cut with integrated etch stop layer
Marc A. Bergendahl, Troy, NY (US); Andrew M. Greene, Albany, NY (US); and Rajasekhar Venigalla, Hopewell Junction, NY (US)
Assigned to Tessera LLC, San Jose, CA (US)
Filed by TESSERA LLC, San Jose, CA (US)
Filed on Aug. 7, 2023, as Appl. No. 18/231,187.
Application 18/231,187 is a continuation of application No. 18/076,755, filed on Dec. 7, 2022, granted, now 11,776,957.
Application 18/076,755 is a continuation of application No. 17/221,401, filed on Apr. 2, 2021, granted, now 11,552,077, issued on Jan. 10, 2023.
Application 17/221,401 is a continuation of application No. 16/738,569, filed on Jan. 9, 2020, granted, now 10,998,314, issued on May 4, 2021.
Application 16/738,569 is a continuation of application No. 16/054,394, filed on Aug. 3, 2018, granted, now 10,580,773, issued on Mar. 3, 2020.
Application 16/054,394 is a continuation of application No. 15/258,513, filed on Sep. 7, 2016, granted, now 10,083,961, issued on Sep. 25, 2018.
Prior Publication US 2024/0222373 A1, Jul. 4, 2024
Int. Cl. H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/62 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/02181 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 21/823821 (2013.01); H01L 23/5286 (2013.01); H01L 23/5329 (2013.01); H01L 23/62 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a first gate structure and a second gate structure in-line with one another and separated by a gate cut; and
a trench comprising a power rail, wherein:
the first and second gate structures extend in a first horizontal direction and each comprise a metal gate and a dielectric gate cap;
the trench and the power rail extend through the gate cut in a second horizontal direction perpendicular to the first horizontal direction; and
an upper surface of the dielectric gate cap of the first gate structure is substantially co-planar with an upper surface of the power rail.