CPC H01L 27/0886 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. A method comprising:
forming a first set of fin structures on a substrate;
forming a sacrificial material between fin structures within the first set of fin structures;
forming a dummy gate with a planar bottom surface over the fin structures and the sacrificial material;
forming sidewall structures on the dummy gate;
laterally etching the sacrificial material underneath the sidewall structures;
depositing a lower sidewall structure where the sacrificial material was removed.
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