US 12,074,158 B2
Semiconductor device
Naoki Takahashi, Kyoto (JP)
Assigned to Rohm Co., Ltd., Kyoto (JP)
Filed by Rohm Co., Ltd., Kyoto (JP)
Filed on May 12, 2023, as Appl. No. 18/316,466.
Application 18/316,466 is a continuation of application No. 17/890,614, filed on Aug. 18, 2022, granted, now 11,699,698.
Application 17/890,614 is a continuation of application No. 17/181,314, filed on Feb. 22, 2021, granted, now 11,469,224, issued on Oct. 11, 2022.
Application 17/181,314 is a continuation of application No. 15/764,397, granted, now 10,964,688, issued on Mar. 30, 2021, previously published as PCT/JP2016/078446, filed on Sep. 27, 2016.
Prior Publication US 2023/0317713 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/02 (2006.01); B60R 16/033 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 23/34 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H02H 5/04 (2006.01)
CPC H01L 27/0296 (2013.01) [H01L 21/822 (2013.01); H01L 21/8234 (2013.01); H01L 23/34 (2013.01); H01L 24/06 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 27/0292 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H01L 27/0629 (2013.01); H01L 27/0711 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/78 (2013.01); H01L 29/7813 (2013.01); H02H 5/044 (2013.01); B60R 16/033 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06153 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor chip;
a power transistor formed in the semiconductor chip; and
a temperature sensing element configured to detect heat generation in the power transistor, wherein
the semiconductor chip includes:
a first electrode formed on a first-principle-face side of the semiconductor chip; and
a plurality of pads formed on the first-principle-face side of the semiconductor chip so as to be arranged in a lopsided manner, and
the temperature sensing element is disposed in a vicinity of the power transistor.