US 12,074,150 B2
Module configurations for integrated III-nitride devices
David Michael Rhodes, Santa Barbara, CA (US); Yifeng Wu, Goleta, CA (US); Sung Hae Yea, La Canada, CA (US); and Primit Parikh, Goleta, CA (US)
Assigned to Transphorm Technology, Inc., Goleta, CA (US)
Filed by Transphorm Technology, Inc., Goleta, CA (US)
Filed on May 30, 2023, as Appl. No. 18/325,829.
Application 18/325,829 is a continuation of application No. 17/308,366, filed on May 5, 2021, granted, now 11,749,656.
Claims priority of provisional application 63/039,853, filed on Jun. 16, 2020.
Prior Publication US 2023/0307429 A1, Sep. 28, 2023
Int. Cl. H01L 25/00 (2006.01); H01L 23/14 (2006.01); H01L 23/31 (2006.01); H01L 23/373 (2006.01); H01L 25/16 (2023.01); H01L 27/088 (2006.01); H03K 17/687 (2006.01)
CPC H01L 25/16 (2013.01) [H01L 23/142 (2013.01); H01L 23/3107 (2013.01); H01L 23/3735 (2013.01); H01L 27/0883 (2013.01); H03K 17/6871 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01)] 23 Claims
OG exemplary drawing
 
1. An electronic module, comprising:
a package and a conductive lead frame; the conductive lead frame comprising a first portion configured to be connected to a high voltage node, a second portion configured to be connected to an output node and a third portion configured to be connected to a ground node, wherein each of the first portion, second portion and third portion is electrically isolated from one another;
a high-side switch comprising a first enhancement-mode transistor and a III-N depletion-mode transistor in a cascode configuration, wherein the III-N depletion-mode transistor comprises a III-N material structure on an electrically conductive substrate; and
a low-side switch;
wherein a drain electrode of the III-N depletion-mode transistor is electrically connected to the first portion of the lead frame, a source electrode of the enhancement-mode transistor is electrically connected to the second portion of the lead frame, a gate electrode of the depletion-mode transistor is electrically connected to the electrically conductive substrate of the depletion-mode transistor, and the substrate of the depletion-mode transistor is electrically connected to the second portion of the lead frame.