US 12,074,148 B2
Heat dissipation in semiconductor packages and methods of forming same
Fong-Yuan Chang, Hsinchu (TW); Po-Hsiang Huang, Tainan (TW); Lee-Chung Lu, Taipei (TW); Jyh Chwen Frank Lee, Palo Alto, CA (US); Yii-Chian Lu, Taipei (TW); Yu-Hao Chen, Hsinchu (TW); and Keh-Jeng Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 2, 2022, as Appl. No. 18/074,027.
Application 18/074,027 is a continuation of application No. 17/157,520, filed on Jan. 25, 2021, granted, now 11,527,518.
Claims priority of provisional application 63/066,368, filed on Aug. 17, 2020.
Claims priority of provisional application 63/056,754, filed on Jul. 27, 2020.
Prior Publication US 2023/0109128 A1, Apr. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 25/10 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/105 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/4871 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/367 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/06589 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package comprises:
a first package component comprising:
a first semiconductor die;
a first encapsulant around the first semiconductor die;
a through via extending through the first encapsulant; and
a contact pad over the through via;
a second package component over and directly bonded to the contact pad by a solder connection; and
a heat dissipation feature between the first semiconductor die and the second package component wherein the heat dissipation feature is attached to the first semiconductor die by a film, wherein an interface between a top surface of the first semiconductor die and a bottom surface of the film is level with an interface between a bottom surface of the contact pad and a top surface of the first encapsulant.