US 12,074,140 B2
System formed through package-in-package formation
Chen-Hua Yu, Hsinchu (TW); Sung-Feng Yeh, Taipei (TW); and Ming-Fa Chen, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 19, 2021, as Appl. No. 17/455,767.
Application 17/455,767 is a division of application No. 16/589,653, filed on Oct. 1, 2019, granted, now 11,189,599.
Claims priority of provisional application 62/854,401, filed on May 30, 2019.
Prior Publication US 2022/0077117 A1, Mar. 10, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/485 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/561 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/3135 (2013.01); H01L 23/485 (2013.01); H01L 24/08 (2013.01); H01L 24/89 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
bonding a first device die onto a second device die of a first wafer;
encapsulating the first device die in a first gap-filling material;
forming first bond pads on a backside of a first semiconductor substrate of the first device die, wherein the first bond pads are electrically connected to first through-vias penetrating through the first semiconductor substrate;
forming a first additional through-via penetrating through the first gap-filling material;
singulating the first wafer and the first gap-filling material to form a first package, wherein the first package comprises the first device die and the second device die;
bonding the first package onto a third device die of a second wafer, wherein at a time the first package is bonded onto the third device die, the third device die is a part of the second wafer, wherein the first additional through-via directly connects the second device die to the third device die, and the first additional through-via is between the second device die and the third device die;
encapsulating the first package in a second gap-filling material;
forming second bond pads on a backside of a second semiconductor substrate of the second device die, wherein the second bond pads are electrically connected to second through-vias penetrating through the second semiconductor substrate; and
singulating the second wafer and the second gap-filling material to form a second package, wherein the second package comprises the first package and the third device die.