CPC H01L 25/0657 (2013.01) [H01L 25/50 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06575 (2013.01); H01L 2225/06582 (2013.01)] | 4 Claims |
1. A manufacturing method for a semiconductor device having a dolmen structure, the semiconductor device comprising: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed around the first chip on the substrate; and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip, the method comprising processes of:
(A) preparing a laminate film comprising a base material film, a pressure-sensitive adhesive layer and a support piece formation film in order, wherein the support piece formation film has a multi-layer structure comprising a metal layer and a thermosetting resin layer that is in contact with the metal layer and with the pressure-sensitive adhesive layer;
(B) forming the plurality of support pieces on a surface of the pressure-sensitive adhesive layer by singulating the support piece formation film;
(C) picking up the plurality of support pieces from the pressure-sensitive adhesive layer;
(D) disposing the first chip on the substrate;
(E) disposing the plurality of support pieces onto the substrate around the first chip or around a region in which the first chip is to be disposed on the substrate;
(F) preparing an adhesive piece-attached chip comprising the second chip and a bonding adhesive piece provided on one surface of the second chip; and
(G) constructing the dolmen structure by disposing the adhesive piece-attached chip on surfaces of the plurality of support pieces.
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