US 12,074,135 B2
Semiconductor device and method of controlling warpage during LAB
Wagno Alves Braganca, Jr., Incheon (KR); and KyungOe Kim, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on May 11, 2023, as Appl. No. 18/315,991.
Application 18/315,991 is a continuation of application No. 17/447,001, filed on Sep. 7, 2021, granted, now 11,688,718.
Prior Publication US 2023/0307414 A1, Sep. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/97 (2013.01) [H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/3511 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a semiconductor die;
disposing a first support tape over a surface of the semiconductor die;
providing a substrate;
disposing the semiconductor die on the substrate with the first support tape opposite the substrate; and
projecting a laser emission onto the semiconductor die as disposed on the substrate while retaining the first support tape disposed on the semiconductor die to provide stress relief for the semiconductor die during the laser emission.