US 12,074,128 B2
Three-dimensional semiconductor memory device and electronic system including the same
Moorym Choi, Yongin-si (KR); and Yoonjo Hwang, Gimpo-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 8, 2021, as Appl. No. 17/545,117.
Claims priority of application No. 10-2021-0065032 (KR), filed on May 20, 2021.
Prior Publication US 2022/0375888 A1, Nov. 24, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/535 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01)
CPC H01L 24/08 (2013.01) [H01L 23/535 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional semiconductor memory device, comprising:
a first substrate;
a peripheral circuit structure on the first substrate;
a cell array structure on the peripheral circuit structure, the cell array structure including:
a stack structure, the stack structure including interlayer dielectric layers and gate electrodes, which are alternately and repeatedly stacked on the peripheral circuit structure,
a first insulating layer covering the stack structure, and
a second substrate on the stack structure and the first insulating layer, the stack structure being between a bottom surface of the second substrate and the peripheral circuit structure;
a second insulating layer on the cell array structure;
a first penetration contact penetrating the first insulating layer, the second substrate, and the second insulating layer; and
a second penetration contact penetrating the first insulating layer and the second insulating layer, the second penetration contact being spaced apart from the second substrate, and both the first and second penetration contacts having widths decreasing with an increasing distance from the first substrate.