US 12,074,127 B2
Semiconductor die contact structure and method
Chung-Shi Liu, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 28, 2022, as Appl. No. 18/059,148.
Application 14/604,503 is a division of application No. 12/846,214, filed on Jul. 29, 2010, granted, now 9,024,431, issued on May 5, 2015.
Application 18/059,148 is a continuation of application No. 17/101,368, filed on Nov. 23, 2020, granted, now 11,515,272.
Application 17/101,368 is a continuation of application No. 16/225,969, filed on Dec. 19, 2018, granted, now 10,847,459, issued on Nov. 24, 2020.
Application 16/225,969 is a continuation of application No. 15/395,991, filed on Dec. 30, 2016, granted, now 10,163,785, issued on Dec. 25, 2018.
Application 15/395,991 is a continuation of application No. 14/604,503, filed on Jan. 23, 2015, granted, now 9,536,811, issued on Jan. 3, 2017.
Claims priority of provisional application 61/256,187, filed on Oct. 29, 2009.
Prior Publication US 2023/0085696 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/482 (2006.01); H01L 23/485 (2006.01); H01L 23/498 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 23/48 (2013.01); H01L 23/481 (2013.01); H01L 23/482 (2013.01); H01L 23/4824 (2013.01); H01L 23/485 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 23/52 (2013.01); H01L 23/522 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 24/10 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/13 (2013.01); H01L 24/26 (2013.01); H01L 24/28 (2013.01); H01L 24/29 (2013.01); H01L 23/53228 (2013.01); H01L 2224/0225 (2013.01); H01L 2224/0226 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/014 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/35121 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a conductive feature over a substrate, the conductive feature having a thickness of at least 15,000 Å;
a contact making physical contact with the conductive feature, the contact having a smaller width than the conductive feature, the contact comprising a U-shape in a cross-sectional view; and
a conductive pillar extending below a top surface of the contact.