US 12,074,114 B2
Chip fabrication method and product including raised and recessed alignment structures
Máté Jenei, Espoo (FI); Kok Wai Chan, Espoo (FI); and Kuan Yen Tan, Espoo (FI)
Assigned to IQM Finland OY, Espoo (FI)
Filed by IQM FINLAND OY, Espoo (FI)
Filed on Nov. 7, 2023, as Appl. No. 18/503,673.
Application 18/503,673 is a continuation of application No. PCT/FI2021/050615, filed on Sep. 17, 2021.
Prior Publication US 2024/0071944 A1, Feb. 29, 2024
Int. Cl. H01L 23/544 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01)
CPC H01L 23/544 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/8113 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method comprising:
etching a first substrate to form a raised alignment structure that extends above a first surface of the first substrate;
etching a second substrate to form a recessed alignment structure that extends below a first surface of the second substrate; and
positioning the raised alignment structure opposite the recessed alignment structure such that the first surface of the first substrate is opposite and parallel to the first surface of the second substrate and such that the raised alignment structure is positioned at least partially within the recessed alignment structure;
wherein the raised alignment structure and recessed alignment structure are shaped such that the raised alignment structure extends at least partially within the recessed alignment structure to a set depth and such that when the raised alignment structure is positioned within the recessed alignment structure at the set depth, movement of the first substrate is restricted towards the second substrate and relative to the second substrate along at least one axis parallel to the first surfaces of the first and second substrates, wherein the method further comprises, before the step of positioning the raised alignment structure opposite the recessed alignment structure, forming quantum circuit components on the first and/or second substrate, wherein forming quantum circuit components comprises:
forming a qubit on the raised alignment structure;
forming a through-substrate via in the second substrate, the through-substrate via extending through the second substrate from the recessed alignment structure to a second surface of the second substrate; and
metallizing the sidewalls of the through-substrate via.