CPC H01L 23/53295 (2013.01) [H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/34 (2013.01); H01L 23/481 (2013.01)] | 20 Claims |
1. A method for manufacturing a semiconductor device, comprising:
receiving a first substrate bonded to a second substrate by a dielectric layer, wherein a conductive layer is disposed in the dielectric layer and a cavity is formed between the first substrate, the second substrate and the dielectric layer;
forming a via opening in the second substrate to expose the conductive layer and a vent hole in the second substrate to couple to the cavity;
forming a first buffer layer covering sidewalk of the via opening and a second buffer layer covering sidewalk of the vent hole; and
forming a connecting structure in the via opening and a sealing structure to seal the vent hole.
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