US 12,074,109 B2
Trench power rail in cell circuits to reduce resistance and related power distribution networks and fabrication methods
Mustafa Badaroglu, Leuven (BE); and Zhongze Wang, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Jan. 26, 2022, as Appl. No. 17/648,981.
Prior Publication US 2023/0238325 A1, Jul. 27, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 27/092 (2006.01)
CPC H01L 23/5286 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/092 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An integrated circuit (IC), comprising:
a first cell circuit comprising a first trench contact disposed in a first metal layer, the first trench contact extending along a first longitudinal axis in a first direction;
a second cell circuit comprising a second trench contact disposed in the first metal layer, the second trench contact extending along a second longitudinal axis in the first direction;
a cell isolation trench in an isolation region between a first end of the first trench contact and a second end of the second trench contact;
a second metal layer adjacent the first metal layer in a second direction, a first thickness of the second metal layer extending in the second direction;
a via layer between the first metal layer and the second metal layer, a second thickness of the via layer extending in the second direction; and
a trench power rail in the cell isolation trench, the trench power rail extending along a third longitudinal axis in a third direction, a thickness of the trench power rail comprising the first thickness of the second metal layer, the second thickness of the via layer, and a third thickness in the first metal layer.