US 12,074,107 B2
Structure and method of forming a semiconductor device with resistive elements
Hong-Wei Chan, Hsinchu (TW); Yung-Shih Cheng, Hsinchu (TW); and Wen-Sheh Huang, Hsin Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 20, 2022, as Appl. No. 17/813,880.
Application 17/813,880 is a division of application No. 17/111,417, filed on Dec. 3, 2020, granted, now 11,437,313.
Claims priority of provisional application 62/978,738, filed on Feb. 19, 2020.
Prior Publication US 2022/0359387 A1, Nov. 10, 2022
Int. Cl. H01L 23/522 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/5228 (2013.01) [H01L 21/762 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 28/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first metal line;
a first punch stop layer having a first top surface that is substantially level with a second top surface of the first metal line;
a resistive element disposed over the first punch stop layer;
a first conductive via in contact with both the first top surface of the first punch stop layer and first sidewall surfaces of the resistive element; and
a third conductive via in contact with the second top surface of the first metal line, wherein a first top edge of the first conductive via is offset from a second top edge of the third conductive via.