US 12,074,093 B2
Integrated semiconductor device
Manabu Yanagihara, Osaka (JP); Takahiro Sato, Toyama (JP); Hiroto Yamagiwa, Hyogo (JP); and Masahiro Hikita, Hyogo (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Appl. No. 17/630,766
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
PCT Filed Aug. 21, 2020, PCT No. PCT/JP2020/031632
§ 371(c)(1), (2) Date Jan. 27, 2022,
PCT Pub. No. WO2021/039629, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 2019-157650 (JP), filed on Aug. 30, 2019.
Prior Publication US 2022/0320091 A1, Oct. 6, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 27/085 (2006.01); H01L 29/778 (2006.01); H01L 27/06 (2006.01); H02M 3/335 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 23/4824 (2013.01); H01L 27/085 (2013.01); H01L 29/7786 (2013.01); H01L 27/0605 (2013.01); H02M 3/33569 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An integrated semiconductor device comprising:
a semiconductor substrate; and
a high-side transistor and a low-side transistor which are integrated on the semiconductor substrate and configure a half-bridge, wherein
each of the high-side transistor and the low-side transistor includes an active region, a source electrode, a drain electrode, and a gate electrode,
the source electrode of the high-side transistor and the drain electrode of the low-side transistor are integrated as a common electrode, and
in a plan view of the integrated semiconductor device, the common electrode divides the active region of the high-side transistor and divides the active region of the low-side transistor.