US 12,074,084 B2
Heat dispersion layers for double sided interconnect
Hsin-Yen Huang, New Taipei (TW); Shao-Kuan Lee, Kaohsiung (TW); Shau-Lin Shue, Hsinchu (TW); Hsiao-Kang Chang, Hsinchu (TW); and Cherng-Shiaw Tsai, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 21, 2023, as Appl. No. 18/304,563.
Application 18/304,563 is a division of application No. 17/412,423, filed on Aug. 26, 2021, granted, now 11,640,928.
Prior Publication US 2023/0260867 A1, Aug. 17, 2023
Int. Cl. H01L 23/52 (2006.01); H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/3677 (2013.01) [H01L 21/4871 (2013.01); H01L 23/373 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
9. An integrated chip comprising:
a device layer comprising a front-side surface opposite a back-side surface;
a plurality of semiconductor devices arranged on the front-side surface of the device layer;
a first interconnect structure arranged on the front-side surface of the device layer;
a second interconnect structure overlying the back-side surface of the device layer, wherein the first and second interconnect structures respectively comprise a plurality of conductive wires and a plurality of conductive vias arranged within an interconnect dielectric structure and electrically coupled to the plurality of semiconductor devices; and
a first heat dispersion layer arranged between the back-side surface of the device layer and the second interconnect structure, wherein a first thermal conductivity of the first heat dispersion layer is greater than a thermal conductivity of the interconnect dielectric structure.