CPC H01L 23/3171 (2013.01) [H01L 21/56 (2013.01); H01L 23/291 (2013.01)] | 2 Claims |
1. A film forming method comprising the steps of:
forming a mixture gas containing at least an atomized metal oxide precursor, a carrier gas, and a dopant;
conveying the mixture gas to a film-forming unit via a conveyor; and
forming a semiconductor film on a substrate by subjecting the mixture gas to a thermal reaction in the film-forming unit,
wherein:
at least a surface in the conveyor that comes into contact with the mixture gas is a non-silicone resin, and
the non-silicone resin contains any one or more of polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, acrylonitrile-butadiene-styrene resin, acrylic resin, polyamide, polyimide, polyamide imide, nylon, acetal resin, polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, and polyether ether ketone.
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