US 12,074,074 B2
Method and system for processing wafer
Po-Ju Chen, Hsinchu (TW); Sheng-Jen Cheng, Tainan (TW); Cha-Hsin Chao, Taipei (TW); and Chih-Teng Liao, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 7, 2021, as Appl. No. 17/340,114.
Prior Publication US 2022/0392811 A1, Dec. 8, 2022
Int. Cl. H01L 21/66 (2006.01); H01J 37/32 (2006.01); H01L 21/687 (2006.01); G01F 1/00 (2022.01); G01N 15/00 (2006.01); G01N 15/06 (2006.01); G01N 15/075 (2024.01); G01P 3/00 (2006.01)
CPC H01L 22/20 (2013.01) [H01J 37/32935 (2013.01); H01L 21/68742 (2013.01); G01F 1/00 (2013.01); G01N 15/00 (2013.01); G01N 2015/0046 (2013.01); G01N 15/06 (2013.01); G01N 15/075 (2024.01); G01P 3/00 (2013.01); H01J 37/32715 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/202 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/24585 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for processing a wafer, comprising:
monitoring a distribution of particles in a chamber while processing the wafer;
determining at least one parameter according to the distribution of the particles for configuring at least one device of the chamber, wherein the at least one parameter includes a first flow rate parameter and a second flow rate parameter, and the at least one device include a gas source having an inner nozzle and an outer nozzle;
configuring the at least one device of the chamber according to the at least one parameter, wherein the gas source is configured to change a flow rate of a gas provided via the inner nozzle according to the first flow rate parameter, and change a flow rate of a gas provided via the outer nozzle according to the second flow rate parameter; and
processing another wafer based on a recipe after configuring the at least one device of the chamber.