CPC H01L 22/20 (2013.01) [H01J 37/32935 (2013.01); H01L 21/68742 (2013.01); G01F 1/00 (2013.01); G01N 15/00 (2013.01); G01N 2015/0046 (2013.01); G01N 15/06 (2013.01); G01N 15/075 (2024.01); G01P 3/00 (2013.01); H01J 37/32715 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/202 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/24585 (2013.01)] | 20 Claims |
1. A method for processing a wafer, comprising:
monitoring a distribution of particles in a chamber while processing the wafer;
determining at least one parameter according to the distribution of the particles for configuring at least one device of the chamber, wherein the at least one parameter includes a first flow rate parameter and a second flow rate parameter, and the at least one device include a gas source having an inner nozzle and an outer nozzle;
configuring the at least one device of the chamber according to the at least one parameter, wherein the gas source is configured to change a flow rate of a gas provided via the inner nozzle according to the first flow rate parameter, and change a flow rate of a gas provided via the outer nozzle according to the second flow rate parameter; and
processing another wafer based on a recipe after configuring the at least one device of the chamber.
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