US 12,074,071 B2
Source/drain structures and method of forming
Wei-Min Liu, Hsinchu (TW); Hsueh-Chang Sung, Zhubei (TW); Li-Li Su, ChuBei (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 6, 2023, as Appl. No. 18/178,640.
Application 18/178,640 is a continuation of application No. 17/218,459, filed on Mar. 31, 2021, granted, now 11,600,534.
Prior Publication US 2023/0207396 A1, Jun. 29, 2023
Int. Cl. H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823864 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/4983 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first source/drain region extending from a substrate;
a first pair of spacers;
a second pair of spacers, the first source/drain region extending between the first pair of spacers and the second pair of spacers, the first pair of spacers and the second pair of spacers having a first height, wherein a first spacer of the first pair of spacers and a second spacer of the second pair of spacers are connected to form a connected spacer, wherein the connected spacer comprises a first sublayer and a second sublayer, the first sublayer having a U shape, the second sublayer filling a gap in the U shape;
a second source/drain region extending from the substrate; and
a third pair of spacers, the second source/drain region extending between the third pair of spacers, the third pair of spacers having a second height, the second height being greater than the first height.