| CPC H01L 21/76898 (2013.01) [H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 23/481 (2013.01); H01L 23/53295 (2013.01)] | 20 Claims |
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1. A structure comprising:
a semiconductor substrate;
a plurality of dielectric layers over the semiconductor substrate;
a first conductive feature over the plurality of dielectric layers;
a second conductive feature underlying the semiconductor substrate;
a through-via penetrating through the semiconductor substrate and the plurality of dielectric layers, wherein the through-via electrically interconnects the first conductive feature and the second conductive feature;
a first liner encircling the through-via; and
a second liner encircling the first liner, wherein the second liner has a higher density than the first liner.
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