US 12,074,064 B2
TSV structure and method forming same
Ming-Tsu Chung, Hsinchu (TW); Ku-Feng Yang, Baoshan Township (TW); Tsang-Jiuh Wu, Hsinchu (TW); Wen-Chih Chiou, Zhunan Township (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/814,775.
Application 17/814,775 is a division of application No. 17/139,030, filed on Dec. 31, 2020, granted, now 11,527,439.
Claims priority of provisional application 63/081,502, filed on Sep. 22, 2020.
Prior Publication US 2022/0359292 A1, Nov. 10, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 23/481 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate;
a plurality of dielectric layers over the semiconductor substrate;
a first conductive feature over the plurality of dielectric layers;
a second conductive feature underlying the semiconductor substrate;
a through-via penetrating through the semiconductor substrate and the plurality of dielectric layers, wherein the through-via electrically interconnects the first conductive feature and the second conductive feature;
a first liner encircling the through-via; and
a second liner encircling the first liner, wherein the second liner has a higher density than the first liner.