| CPC H01L 21/76895 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01)] | 20 Claims |
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1. A method of fabricating a semiconductor device, comprising:
etching back a source/drain contact to define a substrate topography including a trench disposed between adjacent hard mask layers;
depositing a contact etch stop layer (CESL) along sidewall and bottom surfaces of the trench, and over the adjacent hard mask layers, to provide the CESL having a snake-like pattern disposed over the substrate topography;
forming a contact via opening in a dielectric layer disposed over the CESL, wherein the contact via opening exposes a portion of the CESL within the trench;
etching the portion of the CESL exposed by the contact via opening to form an enlarged contact via opening and expose the etched back source/drain contact; and
depositing a metal layer within the enlarged contact via opening to provide a contact via in contact with the exposed etched back source/drain contact.
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11. A method, comprising:
providing a substrate including a gate structure and source/drain contacts disposed on either side of the gate structure;
performing a plurality of etch back processes to form trenches over the source/drain contacts on opposite sides of the gate structure;
forming a contact etch stop layer (CESL) within the trenches and over the gate structure to define a snaking CESL disposed over the substrate;
after depositing a dielectric layer over the snaking CESL, performing a CESL breakthrough process to expose at least one of the source/drain contacts adjacent to the gate structure; and
forming a metal layer in contact with the at least one exposed source/drain contacts adjacent to the gate structure.
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18. A method, comprising:
forming a plurality of trenches interposing adjacent hard mask layers to define a substrate topography having a snake-like pattern;
depositing a contact etch stop layer (CESL) conformally over the substrate topography, the conformally deposited CESL having the snake-like pattern of the substrate topography;
etching a portion of the CESL within one of the plurality of trenches to expose a source/drain contact; and
forming a metal layer within the one of the plurality of trenches and in contact with the exposed source/drain contact.
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