CPC H01L 21/76837 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a conductive layer over a layer;
forming one or more openings in the conductive layer to form one or more conductive features and to expose portions of the layer;
forming a liner on each of the one or more conductive features;
selectively forming a first dielectric material in the openings; and
selectively forming a first dielectric layer over each first dielectric material, wherein a top surface of the first dielectric layer is substantially co-planar with a top surface of the liner.
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