US 12,074,058 B2
Patterning methods for semiconductor devices
Wei-Ren Wang, New Taipei (TW); Shing-Chyang Pan, Jhudong Township (TW); Ching-Yu Chang, Taipei (TW); Wan-Lin Tsai, Hsinchu (TW); Jung-Hau Shiu, New Taipei (TW); and Tze-Liang Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/308,937.
Application 18/308,937 is a continuation of application No. 17/119,692, filed on Dec. 11, 2020, granted, now 11,676,852.
Application 17/119,692 is a continuation of application No. 16/010,352, filed on Jun. 15, 2018, granted, now 10,867,839, issued on Dec. 15, 2020.
Prior Publication US 2023/0260829 A1, Aug. 17, 2023
Int. Cl. H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76802 (2013.01) [H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76879 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a tri-layer structure over a substrate, the tri-layer structure comprising an upper layer, a middle layer, and a bottom layer;
patterning the upper layer to form a first mask pattern, the first mask pattern comprising a first opening;
depositing a film over the first mask pattern and the middle layer and within the first opening, wherein the film comprises a first portion and a second portion, the first portion of the film being on a top surface of the first mask pattern and having a first thickness, the second portion of the film being on a sidewall of the first mask pattern, the second portion of the film having a second thickness proximate the top surface of the first mask pattern and a third thickness distal the top surface of the first mask pattern, the first thickness being greater than the third thickness;
performing a descum process in the first opening, wherein performing the descum process in the first opening partially removes the middle layer; and
etching the middle layer using the first mask pattern and remaining portions of the film as an etching mask to form a second mask pattern.