US 12,074,057 B2
Isolation structures
Ta-Chun Lin, Hsinchu (TW); Kuo-Hua Pan, Hsinchu (TW); and Jhon Jhy Liaw, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Nov. 21, 2022, as Appl. No. 18/057,688.
Application 18/057,688 is a continuation of application No. 16/696,272, filed on Nov. 26, 2019, granted, now 11,515,199.
Claims priority of provisional application 62/891,615, filed on Aug. 26, 2019.
Prior Publication US 2023/0081710 A1, Mar. 16, 2023
Int. Cl. H01L 21/762 (2006.01); G06F 30/392 (2020.01); H01L 21/84 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/76283 (2013.01) [H01L 21/845 (2013.01); H01L 29/0649 (2013.01); G06F 30/392 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first cell disposed over a first region doped with a first-type dopant;
a second cell disposed over a second region doped with the first-type dopant; and
a tap cell disposed over a third region doped with a second-type dopant different from the first-type dopant, the tap cell being sandwiched between the first cell and the second cell,
wherein the first region, the second region, and the third region are portions of a continuous active region and are directly over a same well.