US 12,074,035 B2
Method for partially removing tungsten in semiconductor manufacturing process
Chia-Ling Chung, Hsinchu (TW); Chun-Chih Cheng, Hsinchu (TW); Ying-Liang Chuang, Hsinchu (TW); Ming-Hsi Yeh, Hsinchu (TW); and Kuo-Bin Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 12, 2022, as Appl. No. 17/742,806.
Prior Publication US 2023/0369063 A1, Nov. 16, 2023
Int. Cl. H01L 21/3213 (2006.01); H01L 29/40 (2006.01)
CPC H01L 21/32134 (2013.01) [H01L 29/401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for selectively removing a tungsten-including layer, comprising:
forming a tungsten-including layer which has a first portion and a second portion;
performing a treatment on a surface region of the first portion of the tungsten-including layer so as to convert tungsten in the surface region into tungsten oxide; and
partially removing the tungsten-including layer using an etchant which has a higher etching selectivity to tungsten than tungsten oxide such that the second portion of the tungsten-including layer is fully removed, and the first portion of the tungsten-including layer, having the tungsten oxide in the surface region, is at least partially retained,
wherein the second portion is prevented from being treated during performing the treatment on the surface region of the first portion of the tungsten-including layer, and
wherein partially removing the tungsten-including layer is performed after performing the treatment on the surface region of the first portion of the tungsten-including layer.