US 12,074,033 B2
Plasma processing method
Chaomei Liu, Tokyo (JP); Hitoshi Kobayashi, Tokyo (JP); Masahito Mori, Tokyo (JP); and Ryota Takahashi, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 17/439,765
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Dec. 23, 2020, PCT No. PCT/JP2020/048095
§ 371(c)(1), (2) Date Sep. 15, 2021,
PCT Pub. No. WO2021/171764, PCT Pub. Date Sep. 2, 2021.
Claims priority of application No. PCT/JP2020/007939 (WO), filed on Feb. 27, 2020.
Prior Publication US 2022/0392772 A1, Dec. 8, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32174 (2013.01); H01L 21/02129 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plasma processing method for plasma etching a silicon film containing boron, the plasma processing method comprising:
etching the silicon film containing boron by using a mixed gas of a halogen gas, a fluorine-containing gas, and a boron trichloride gas.