US 12,074,030 B2
Etching method of oxide semiconductor film, oxide semiconductor workpiece, and electronic device
Akiko Hirata, Kanagawa (JP); and Masanaga Fukasawa, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/049,496
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Apr. 10, 2019, PCT No. PCT/JP2019/015555
§ 371(c)(1), (2) Date Oct. 21, 2020,
PCT Pub. No. WO2019/216092, PCT Pub. Date Nov. 14, 2019.
Claims priority of application No. 2018-089982 (JP), filed on May 8, 2018; and application No. 2019-003233 (JP), filed on Jan. 11, 2019.
Prior Publication US 2021/0249273 A1, Aug. 12, 2021
Int. Cl. H01L 21/3065 (2006.01); H01L 21/30 (2006.01); H01L 21/465 (2006.01); H01L 29/24 (2006.01)
CPC H01L 21/3065 (2013.01) [H01L 21/30 (2013.01); H01L 21/465 (2013.01); H01L 29/24 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An etching method of an oxide semiconductor film, the etching method comprising:
forming a reduction layer in the oxide semiconductor film by irradiating the oxide semiconductor film with a reducing gas; and
sputtering the reduction layer by irradiating the oxide semiconductor film with a rare gas thereafter.