US 12,074,029 B2
Molybdenum deposition
Patrick A. Van Cleemput, Duvall, WA (US); Shruti Vivek Thombare, Sunnyvale, CA (US); and Michal Danek, Cupertino, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Jul. 21, 2022, as Appl. No. 17/814,209.
Application 17/814,209 is a continuation of application No. 17/294,378, previously published as PCT/US2019/062067, filed on Nov. 18, 2019.
Claims priority of provisional application 62/769,479, filed on Nov. 19, 2018.
Prior Publication US 2022/0359211 A1, Nov. 10, 2022
Int. Cl. H01L 21/285 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 21/28568 (2013.01) [C23C 16/06 (2013.01); C23C 16/45525 (2013.01); H01L 23/53257 (2013.01); H10B 12/34 (2023.02); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first molybdenum (Mo) layer by exposing a substrate in a reaction chamber to a molybdenum oxychloride and boron-containing reducing; and
forming a bulk conductive layer on the first Mo layer using hydrogen (H2) as a reducing agent wherein the bulk conductive layer is formed by ALD.