CPC H01L 21/28088 (2013.01) [H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 27/0924 (2013.01); H01L 29/4966 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a gate dielectric layer on a fin structure;
forming a work function layer on the gate dielectric layer;
forming a capping layer on the work function layer;
forming a barrier layer on the capping layer;
performing a hydrogen treatment on the work function layer, the capping layer, and the barrier layer after forming the barrier layer; and
forming a glue layer on the barrier layer after performing the hydrogen treatment.
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