US 12,074,027 B2
Underlayer of multilayer structure and methods of use thereof
Jing-Hong Huang, Hsinchu (TW); Wei-Han Lai, Hsinchu (TW); and Ching-Yu Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 22, 2021, as Appl. No. 17/481,680.
Claims priority of provisional application 63/194,742, filed on May 28, 2021.
Prior Publication US 2022/0392764 A1, Dec. 8, 2022
Int. Cl. H01L 21/027 (2006.01); H01L 21/3213 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01)
CPC H01L 21/0276 (2013.01) [H01L 21/32139 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
providing a substrate;
forming a bottom layer over the substrate, wherein the bottom layer includes a polymer, a first cross-linking agent and a second cross-linking agent different from the first cross-linking agent, the second cross-linking agent including one or more functional groups including fluorine;
thermally treating the bottom layer;
forming a hard mask layer over the thermally treated bottom layer;
forming a photoresist layer over the hard mask layer;
exposing the photoresist layer to a radiation source according to a pattern;
developing the photoresist layer;
performing a first etching process to form the pattern in the bottom layer and the hard mask layer but not in the substrate; and
performing a second etching process to form the pattern in the substrate.