CPC H01L 21/0276 (2013.01) [H01L 21/32139 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01)] | 20 Claims |
1. A method comprising:
providing a substrate;
forming a bottom layer over the substrate, wherein the bottom layer includes a polymer, a first cross-linking agent and a second cross-linking agent different from the first cross-linking agent, the second cross-linking agent including one or more functional groups including fluorine;
thermally treating the bottom layer;
forming a hard mask layer over the thermally treated bottom layer;
forming a photoresist layer over the hard mask layer;
exposing the photoresist layer to a radiation source according to a pattern;
developing the photoresist layer;
performing a first etching process to form the pattern in the bottom layer and the hard mask layer but not in the substrate; and
performing a second etching process to form the pattern in the substrate.
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