| CPC H01L 21/0271 (2013.01) [G03F 7/0025 (2013.01); G03F 7/11 (2013.01)] | 20 Claims |
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1. A method of patterning a photoresist layer, comprising:
forming a negative tone photoresist layer over a substrate;
selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and
removing portions of the photoresist layer not exposed to the actinic radiation by applying a developer composition to the selectively exposed photoresist layer to form a pattern,
wherein the developer composition comprises:
a first solvent, a second solvent, a surfactant, and an organic acid or an organic base,
wherein the first solvent is at least one of hexane, benzene, dimethyl sulfoxide, acetone, ethylene glycol, methanol, ethanol, propanol, isopropanol, propanediol, 4-methyl-2-pentanone, butyldiglycol, ethyl acetate, butyl acetate, propylene glycol methyl ether acetate, propylene glycol methyl ether, diethyl ether, isobutyl propionate, tetrahydrofuran, hydrogen peroxide, or water;
the organic acid is at least one of ethanedioic acid, formic acid, acetic acid, propanoic acid, 2-hydroxypropanoic acid, butanoic acid, 2-hydroxybutanedioic acid, pentanoic acid, hexanoic acid, heptanoic acid, caprylic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethanesulfonic acid, methanesulfonic acid, oxalic acid, maleic acid, carbonic acid, oxoethanoic acid, 2-hydroxyethanoic acid, propanedioic acid, butanedioic acid, 3-oxobutanoic acid, hydroxylamine-o-sulfonic acid, formamidinesulfinic acid, methylsulfamic acid, sulfoacetic acid, 1,1,2,2-tetrafluoroethanesulfonic acid, 1,3-propanedisulfonic acid, nonafluorobutane-1-sulfonic acid, or 5-sulfosalicylic acid;
the organic base is at least one of monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol, 1H-benzotriazole, 1,2,4-triazole, 1,8-diazabicycloundec-7-ene, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide;
the second solvent is at least one of methanol, ethanol, n-propanol, n-butanol, formic acid, formamide, acetone, methyl ethyl ketone, acetonitrile, dimethyl formamide, dimethyl sulfoxide, or water; and
the first solvent and second solvent are different solvents.
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8. A photoresist developer composition, comprising:
a first solvent, a second solvent, a surfactant, and an organic acid or an organic base,
wherein the first solvent is at least one of hexane, benzene, dimethyl sulfoxide, acetone, ethylene glycol, methanol, ethanol, propanol, isopropanol, propanediol, 4-methyl-2-pentanone, butyldiglycol, ethyl acetate, butyl acetate, propylene glycol methyl ether acetate, propylene glycol methyl ether, diethyl ether, isobutyl propionate, tetrahydrofuran, hydrogen peroxide, or water;
the organic acid is at least one of ethanedioic acid, formic acid, acetic acid, propanoic acid, 2-hydroxypropanoic acid, butanoic acid, 2-hydroxybutanedioic acid, pentanoic acid, hexanoic acid, heptanoic acid, caprylic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethanesulfonic acid, methanesulfonic acid, oxalic acid, maleic acid, carbonic acid, oxoethanoic acid, 2-hydroxyethanoic acid, propanedioic acid, butanedioic acid, 3-oxobutanoic acid, hydroxylamine-o-sulfonic acid, formamidinesulfinic acid, methylsulfamic acid, sulfoacetic acid, 1,1,2,2-tetrafluoroethanesulfonic acid, 1,3-propanedisulfonic acid, nonafluorobutane-1-sulfonic acid, or 5-sulfosalicylic acid;
the organic base is at least one of monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol, 1H-benzotriazole, 1,2,4-triazole, 1,8-diazabicycloundec-7-ene, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide;
the second solvent is at least one of methanol, ethanol, n-propanol, n-butanol, formic acid, formamide, acetone, methyl ethyl ketone, acetonitrile, dimethyl formamide, dimethyl sulfoxide, or water; and
the first solvent and second solvent are different solvents.
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15. A photoresist developer composition, comprising:
a first solvent, a second solvent, a surfactant, and an inorganic acid or an inorganic base,
wherein the first solvent is at least one of hexane, benzene, dimethyl sulfoxide, acetone, ethylene glycol, methanol, ethanol, propanol, isopropanol, propanediol, 4-methyl-2-pentanone, butyldiglycol, ethyl acetate, butyl acetate, propylene glycol methyl ether acetate, propylene glycol methyl ether, diethyl ether, isobutyl propionate, tetrahydrofuran, hydrogen peroxide, or water;
the inorganic acid is at least one of nitric acid, sulfuric acid, or hydrochloric acid;
the inorganic base is at least one of ammonium hydroxide, ammonium sulfamate, or ammonium carbamate; and
the second solvent is at least one of methanol, ethanol, n-propanol, n-butanol, formic acid, formamide, acetone, methyl ethyl ketone, acetonitrile, dimethyl formamide, dimethyl sulfoxide, or water; and
the first solvent and second solvent are different solvents.
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