US 12,074,024 B2
Semiconductor devices and methods of manufacturing thereof
Chung-Lei Chen, Hsinchu (TW); Anhao Cheng, Taichung (TW); Meng-I Kang, Changhua County (TW); and Yen-Liang Lin, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 24, 2022, as Appl. No. 17/752,473.
Claims priority of provisional application 63/294,507, filed on Dec. 29, 2021.
Prior Publication US 2023/0207313 A1, Jun. 29, 2023
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02532 (2013.01) [H01L 21/02554 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first silicon layer;
a plurality of first buried oxide layers embedded in the first silicon layer; and
a second silicon layer disposed over the plurality of first buried oxide layers;
wherein vertical distances between the plurality of first buried oxide layers and the second silicon layer, respectively, are different, wherein all of the plurality of first buried oxide layers are separated from one another, and wherein all of the plurality of first buried oxide layers are laterally offset from one another and vertically spaced apart from one another.