CPC H01L 21/02211 (2013.01) [H01L 21/02126 (2013.01); H01L 23/53295 (2013.01); H01L 29/517 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a device disposed over a substrate;
an insulating layer disposed over the device;
a contact penetrating through the insulating layer and electrically connected to the device;
a zeroth dielectric layer disposed on the insulating layer, wherein the zeroth dielectric layer comprises a silicon-containing heterocyclic compound, wherein the silicon-containing heterocyclic compound is represented by one of the formulae (I) and (II):
![]() wherein R is CxH2x+1, and x is an integer from 1 to 6, wherein a dielectric constant of the zeroth dielectric layer is less than 3.2 and greater than 3.0; and
a zeroth metal layer penetrating through the zeroth dielectric layer and electrically to the device.
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