US 12,074,021 B2
Semiconductor device and method of forming the same
Chi-Chang Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 5, 2022, as Appl. No. 17/832,675.
Application 17/832,675 is a division of application No. 16/892,292, filed on Jun. 4, 2020, granted, now 11,462,397.
Claims priority of provisional application 62/880,667, filed on Jul. 31, 2019.
Prior Publication US 2022/0301861 A1, Sep. 22, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 29/51 (2006.01)
CPC H01L 21/02211 (2013.01) [H01L 21/02126 (2013.01); H01L 23/53295 (2013.01); H01L 29/517 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a device disposed over a substrate;
an insulating layer disposed over the device;
a contact penetrating through the insulating layer and electrically connected to the device;
a zeroth dielectric layer disposed on the insulating layer, wherein the zeroth dielectric layer comprises a silicon-containing heterocyclic compound, wherein the silicon-containing heterocyclic compound is represented by one of the formulae (I) and (II):

OG Complex Work Unit Chemistry
wherein R is CxH2x+1, and x is an integer from 1 to 6, wherein a dielectric constant of the zeroth dielectric layer is less than 3.2 and greater than 3.0; and
a zeroth metal layer penetrating through the zeroth dielectric layer and electrically to the device.