CPC H01J 37/32394 (2013.01) [C23C 16/042 (2013.01); C23C 16/045 (2013.01); C23C 16/047 (2013.01); H01J 37/321 (2013.01); H01L 21/67069 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); H01J 37/32082 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01)] | 18 Claims |
1. A plasma processing apparatus comprising:
a chamber having a gas inlet and a gas outlet;
a substrate support disposed in the chamber;
a plasma generator configured to generate a plasma in the chamber; and
a controller configured to cause:
(a) placing a substrate on the substrate support, the substrate having a first film and a second film on the first film, the second film having an opening;
(b) generating a first plasma from a first processing gas in the chamber to etch the first film through the opening in the second film and form a protective film from the second film on a sidewall of an etched feature in the first films; and
(c) generating a second plasma from a second processing gas in the chamber to remove an excessive deposition that clogs the etched feature in the first film and/or the opening in the second film.
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