US 12,074,009 B2
Apparatus for processing a substrate
Yuki Iijima, Miyagi (JP); Toru Hisamatsu, Hillsboro, OR (US); and Kae Kumagai, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Dec. 2, 2021, as Appl. No. 17/540,257.
Application 17/540,257 is a continuation of application No. 16/910,093, filed on Jun. 24, 2020, granted, now 11,201,062.
Claims priority of application No. 2019-122068 (JP), filed on Jun. 28, 2019.
Prior Publication US 2022/0093406 A1, Mar. 24, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01)
CPC H01J 37/32394 (2013.01) [C23C 16/042 (2013.01); C23C 16/045 (2013.01); C23C 16/047 (2013.01); H01J 37/321 (2013.01); H01L 21/67069 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); H01J 37/32082 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber having a gas inlet and a gas outlet;
a substrate support disposed in the chamber;
a plasma generator configured to generate a plasma in the chamber; and
a controller configured to cause:
(a) placing a substrate on the substrate support, the substrate having a first film and a second film on the first film, the second film having an opening;
(b) generating a first plasma from a first processing gas in the chamber to etch the first film through the opening in the second film and form a protective film from the second film on a sidewall of an etched feature in the first films; and
(c) generating a second plasma from a second processing gas in the chamber to remove an excessive deposition that clogs the etched feature in the first film and/or the opening in the second film.