US 12,073,894 B2
Semiconductor memory device and operating method of the semiconductor memory device
Hee Youl Lee, Icheon-si Gyeonggi-do (KR)
Assigned to SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed by SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed on Feb. 4, 2022, as Appl. No. 17/665,300.
Claims priority of application No. 10-2021-0120307 (KR), filed on Sep. 9, 2021.
Prior Publication US 2023/0070166 A1, Mar. 9, 2023
Int. Cl. G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a semiconductor memory device programming selected memory cells to store N bits of data in each of the selected memory cells, the method comprising:
foggy programming for increasing threshold voltages of first memory cells to be programmed to (2N−1)th to (2N−1)th target program states, among first to (2N−1)th target program states, to an intermediate program state by using an intermediate verify voltage; and
fine programming for programming the selected memory cells to target program states by using first to (2N−1)th verify voltages,
wherein the fine programming comprises increasing the threshold voltages of the first memory cells to be programmed to the (2N−1)th to (2N−1)th target program states and increasing threshold voltages of second memory cells to be programmed to the first to (2N−1−1)th target program states,
wherein the second memory cells are programmed at a different time from the first memory cells,
wherein N is a natural number greater than 1,
wherein when the fine programming of the first memory cells is suspended, a first read operation to resume the fine programming of the first memory cells is performed using a first read voltage between an erase state and the intermediate verify voltage, and
wherein when the fine programming of the second memory cells is suspended, a second read operation to resume the fine programming of the second memory cells is performed using a second read voltage between the threshold voltages of the first memory cells and the threshold voltages of the second memory cells.