US 12,073,887 B2
Semiconductor device performing block program and operating method thereof
Sanggyu Ko, Suwon-si (KR); and Yeongmin Yoo, Guri-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 16, 2022, as Appl. No. 17/744,942.
Claims priority of application No. 10-2021-0102426 (KR), filed on Aug. 4, 2021.
Prior Publication US 2023/0039489 A1, Feb. 9, 2023
Int. Cl. G11C 16/16 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/16 (2013.01) [G11C 16/0483 (2013.01); G11C 16/107 (2013.01); G11C 16/3404 (2013.01); G11C 16/349 (2013.01); G11C 2216/16 (2013.01); G11C 2216/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a semiconductor device including a controller and a non-volatile memory device operating under control of the controller, the operating method comprising:
determining, by the controller, whether the non-volatile memory device satisfies a block program condition, wherein the block program condition is based on an erase count of a memory block and a number of deteriorated memory cells identified by performing a one-shot program operation;
based on the non-volatile memory device satisfying the block program condition, performing a block program operation a plurality of times, wherein the block program operation is associated with removing excess holes; and
based the non-volatile memory device not satisfying the block program condition, performing an erase operation, wherein the erase operation is associated with removing excess electrons.