US 12,073,884 B2
Storage device and operating method thereof
Won Jong Song, Seoul (KR); Doo Hyun Kim, Hwaseong-si (KR); Soon Young Kim, Hwaseong-si (KR); and Il Han Park, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 30, 2022, as Appl. No. 17/810,067.
Claims priority of application No. 10-2021-0156466 (KR), filed on Nov. 15, 2021.
Prior Publication US 2023/0153030 A1, May 18, 2023
Int. Cl. G11C 7/02 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01)
CPC G11C 16/10 (2013.01) [G06F 3/0679 (2013.01); G11C 16/0483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a memory device including a memory cell array including a plurality of memory cells;
a storage controller configured to:
determine a converged region in which threshold voltage distributions of the memory cells converge after a thermal process is performed in the storage device, before the thermal process is performed in the storage device;
receive a protecting command, before the thermal process is performed in the storage device; and
generate a protecting pattern in the converged region by programming a protecting voltage in the converged region based on the protecting command, before the thermal process is performed in the storage device.