US 12,073,864 B2
Memory cell sensing using two step word line enabling
Makoto Kitagawa, Folsom, CA (US); and Daniele Vimercati, El Dorado Hills, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 10, 2022, as Appl. No. 17/740,528.
Prior Publication US 2023/0368831 A1, Nov. 16, 2023
Int. Cl. G11C 13/00 (2006.01); G11C 11/22 (2006.01)
CPC G11C 11/2259 (2013.01) [G11C 11/221 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method comprising:
maintaining a plate voltage at a first access line of a memory cell during at least a first operation and a second operation of the memory cell;
charging a second access line to a first voltage greater than zero and greater than a threshold voltage of a selector device of the memory cell during the first operation on the memory cell; and
subsequent to the first operation, charging the second access line to a second voltage greater than the plate voltage plus the threshold voltage of the selector device to perform the second operation of the memory cell.