US 12,073,169 B2
Anti-fuse array
Meng-Sheng Chang, Hsinchu (TW); Shao-Yu Chou, Hsinchu (TW); Yao-Jen Yang, Hsinchu (TW); and Chen-Ming Hung, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/446,684.
Application 18/446,684 is a division of application No. 17/178,973, filed on Feb. 18, 2021, granted, now 11,783,107.
Application 17/178,973 is a division of application No. 16/252,291, filed on Jan. 18, 2019, granted, now 10,929,588, issued on Feb. 23, 2021.
Claims priority of provisional application 62/630,160, filed on Feb. 13, 2018.
Prior Publication US 2023/0385510 A1, Nov. 30, 2023
Int. Cl. G06F 7/50 (2006.01); G06F 30/392 (2020.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 23/528 (2006.01); H10B 20/20 (2023.01); H01L 23/525 (2006.01)
CPC G06F 30/392 (2020.01) [G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 23/528 (2013.01); H10B 20/20 (2023.02); H01L 23/5252 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An anti-fuse array comprising:
first through fourth adjacent columns of anti-fuse bits, wherein
the anti-fuse bits of the first and second anti-fuse bit columns comprise portions of active areas of a first active area column, and
the anti-fuse bits of the third and fourth anti-fuse bit columns comprise portions of active areas of a second active area column;
a first set of conductive segment rows, wherein each row of the first set of conductive segment rows comprises first and second conductive segments positioned between adjacent active areas of the first active area column and a third conductive segment positioned between adjacent active areas of the second active area column; and
a second set of conductive segment rows alternating with the first set of conductive segment rows, wherein each row of the second set of conductive segment rows comprises a fourth conductive segment positioned between adjacent active areas of the first active area column and fifth and sixth conductive segments positioned between adjacent active areas of the second active area column.