US 12,073,168 B2
Leakage reduction between two transistor devices on a same continuous fin
Chun-Yen Lin, Hsinchu (TW); Bao-Ru Young, Zhubei (TW); and Tung-Heng Hsieh, Zhudong Township (TW)
Assigned to Taiwan SemiconductorManufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 20, 2023, as Appl. No. 18/355,501.
Application 18/355,501 is a division of application No. 17/104,730, filed on Nov. 25, 2020, granted, now 11,797,743.
Application 17/104,730 is a continuation of application No. 16/798,660, filed on Feb. 24, 2020, granted, now 10,867,101, issued on Dec. 15, 2020.
Prior Publication US 2023/0359800 A1, Nov. 9, 2023
Int. Cl. G06F 30/392 (2020.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01)
CPC G06F 30/392 (2020.01) [H01L 27/0886 (2013.01); H01L 29/7831 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
removing portions of a substrate to form a continuous fin protruding from an upper surface of the substrate, wherein the continuous fin has a first dopant concentration;
performing a doping process to selectively increase a dopant concentration of a first portion of the continuous fin such that the first portion of the continuous fin has a second dopant concentration that is greater than the first dopant concentration;
forming a first gate electrode over a second portion of the continuous fin;
forming a second gate electrode over a third portion of the continuous fin, wherein the first portion of the continuous fin is between the second portion and the third portion of the continuous fin;
forming a dummy gate electrode over the first portion of the continuous fin;
removing upper portions of the continuous fin that are arranged between the first gate electrode, the second gate electrode, and the dummy gate electrode; and
forming source/drain regions between the first gate electrode, the second gate electrode, and the dummy gate electrode.